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參數資料
型號: CY7C199-20LMB
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles
中文描述: 32K X 8 STANDARD SRAM, 20 ns, CQCC28
封裝: LCC-28
文件頁數: 1/13頁
文件大小: 317K
代理商: CY7C199-20LMB
CY7C199
32K x 8 Static RAM
Cypress Semiconductor Corporation
Document #: 38-05160 Rev. *A
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised January 7, 2003
Features
High speed
—10 ns
Fast t
DOE
CMOS for optimum speed/power
Low active power
—467 mW (max, 12 ns “L” version)
Low standby power
—0.275 mW (max, “L” version)
2V data retention (“L” version only)
Easy memory expansion with CE and OE features
TTL-compatible inputs and outputs
Automatic power-down when deselected
Functional Description
The CY7C199 is a high-performance CMOS static RAM
organized as 32,768 words by 8 bits. Easy memory expansion
Logic Block Diagram
is provided by an active LOW Chip Enable (CE) and active
LOW Output Enable (OE) and three-state drivers. This device
has an automatic power-down feature, reducing the power
consumption by 81% when deselected. The CY7C199 is in the
standard 300-mil-wide DIP, SOJ, and LCC packages.
An active LOW Write Enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
0
through I/O
7
) is written into the memory location
addressed by the address present on the address pins (A
0
through A
14
). Reading the device is accomplished by selecting
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. A die coat is used to improve alpha immunity.
Pin Configurations
DIP / SOJ / SOIC
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
COLUMN
DECODER
R
S
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
CE
I/O
1
I/O
2
I/O
3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
20
19
18
17
21
24
23
22
Top View
25
28
27
26
GND
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
WE
A
4
A
3
A
2
A
1
OE
A
0
V
CC
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
A
5
CE
1024 x 32 x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
0
A
1
A
1
A
1
A
1
A
1
28
4
5
6
7
8
9
10
11
12
3 2 1
27
1314151617
26
25
24
23
22
21
20
19
18
A
VC
I
G
W
A
A
I
I
I
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
CE
I/O
7
I/O
6
A
3
A
2
A
1
OE
A
0
I/O
1
A
4
Top View
LCC
22
23
24
25
26
27
28
1
2
3
4
5
6
10
11
15
14
13
12
16
19
18
17
20
21
7
8
9
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
14
A
13
A
12
TSOP I
Top View
(not to scale)
Selection Guide
7C199
-8
8
120
7C199
-10
10
110
90
0.5
0.05
7C199
-12
12
160
90
10
0.05
7C199
-15
15
155
90
10
0.05
7C199
-20
20
150
90
10
0.05
7C199
-25
25
150
80
10
0.05
7C199
-35
35
140
70
10
0.05
7C199
-45
45
140
Unit
ns
mA
Maximum Access Time
Maximum Operating Current
L
Maximum CMOS Standby Current
0.5
10
mA
L
Shaded area contains advance information.
相關PDF資料
PDF描述
CY7C199-20PC 32K x 8 Static RAM
CY7C199-20VC 32K x 8 Static RAM
CY7C199-20VI 32K x 8 Static RAM
CY7C199-20ZC ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles
CY7C199-20ZI 32K x 8 Static RAM
相關代理商/技術參數
參數描述
CY7C199-20PC 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 20ns 28-Pin PDIP
CY7C199-20PXC 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C19920VC 制造商:CYPRESS 功能描述:*
CY7C199-20VC 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC SGL 5V 256KBIT 32KX8 20NS 28PIN MLD SOJ - Rail/Tube
CY7C199-20VCT 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 20ns 28-Pin SOJ T/R 制造商:Rochester Electronics LLC 功能描述:
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