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參數資料
| 型號： | CY9C62256-70SNC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | 存儲器 |
| 英文描述： | 32K x 8 Magnetic Nonvolatile CMOS RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PDSO28 |
| 封裝： | 0.300 INCH, SOIC-28 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 357K |
| 代理商： | CY9C62256-70SNC |
PRELIMINARY
32K x 8 Magnetic Nonvolatile CMOS RAM
CY9C62256
Cypress Semiconductor Corporation
Document #: 38-15001 Rev. *E
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised November 15, 2004
Features
100% form, fit, function-compatible with 32K × 8
micropower SRAM (CY62256)
— Fast Read and Write access: 70 ns
— Voltage range: 4.5V–5.5V operation
— Low power: 330 mW Active; 495
μ
W standby
— Easy memory expansion with CE and OE features
— TTL-compatible inputs and outputs
— Automatic power-down when deselected
Replaces 32K × 8 Battery Backed (BB)SRAM, SRAM,
EEPROM, FeRAM or Flash memory
Data is automatically Write protected during power loss
Write Cycles Endurance: > 10
15
cycles
Data Retention: > 10 Years
Shielded from external magnetic fields
Extra 64 Bytes for device identification and tracking
Temperature ranges
— Commercial: 0°C to 70°C
— Industrial: – 40°C to 85°C
JEDEC STD 28-pin DIP (600-mil), 28-pin (300-mil) SOIC,
and 28-pin TSOP-1 packages. Also available in 450-mil
wide (300-mil body width) 28-pin narrow SOIC.
Logic Block Diagram
Functional Description
The CY9C62256 is a high-performance CMOS nonvolatile
RAM employing an advanced magnetic RAM (MRAM)
process. An MRAM is nonvolatile memory that operates as a
fast read and write RAM. It provides data retention for more
than ten years while eliminating the reliability concerns,
functional disadvantages and system design complexities of
battery-backed SRAM, EEPROM, Flash and FeRAM. Its fast
writes and high write cycle endurance makes it superior to
other types of nonvolatile memory.
The CY9C62256 operates very similarly to SRAM devices.
Memory read and write cycles require equal times. The MRAM
memory is nonvolatile due to its unique magnetic process.
Unlike BBSRAM, the CY9C62256 is truly a monolithic nonvol-
atile memory. It provides the same functional benefits of a fast
write without the serious disadvantages associated with
modules and batteries or hybrid memory solutions.
These capabilities make the CY9C62256 ideal for nonvolatile
memory applications requiring frequent or rapid writes in a
bytewide environment.
The CY9C62256 is offered in both commercial and industrial
temperature ranges.
Pin Configurations
SOIC/DIP
A
10
A
9
A
8
A
7
A
6
A
3
A
2
A
1
COLUMN
DECODER
R
S
INPUTBUFFER
WE
OE
I/O
0
CE
I/O
1
I/O
2
I/O
3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
20
19
18
17
21
24
23
22
Top View
25
28
27
26
GND
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
WE
A
4
A
3
A
2
A
1
OE
A
0
V
CC
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
A
5
CE
512x512
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
11
4
A
A
1
A
1
A
5
A
A
0
22
23
24
25
26
27
28
1
2
3
4
5
6
10
9
11
15
14
13
12
16
19
18
17
20
21
7
8
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
14
A
13
A
12
TSOP I
Top View
(not to scale)
Silicon Sig.
POWER
DOWN &
WRITE
PROTECT
1
相關PDF資料 |
PDF描述 |
|---|---|
| CY9C62256-70SNI | 32K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C6264-70PC | 8K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C6264-70SC | 8K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C6264-70ZC | 8K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C6264-70ZI | 8K x 8 Magnetic Nonvolatile CMOS RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CY9C62256-70SNI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:32K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C62256-70ZC | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:32K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C62256-70ZI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:32K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C6264 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:8K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C6264-70PC | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:8K x 8 Magnetic Nonvolatile CMOS RAM |
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