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參數(shù)資料
| 型號： | CY9C6264-70ZI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | 存儲器 |
| 英文描述： | 8K x 8 Magnetic Nonvolatile CMOS RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PDSO28 |
| 封裝： | 8 X 13.40 MM, TSOP-28 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 396K |
| 代理商： | CY9C6264-70ZI |
PRELIMINARY
8K x 8 Magnetic Nonvolatile CMOS RAM
CY9C6264
Cypress Semiconductor Corporation
Document #: 38-15003 Rev. *D
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised January 25, 2005
Features
100% form, fit, function compatible with 8K × 8
micropower SRAM CY6264
— Fast Read and Write access: 70 ns
— Voltage range: 4.5V–5.5V operation
— Low active power: 330 mW (max.)
—
Low standby power, CMOS: 495
μ
W (max.)
— Easy memory expansion with CE and OE features
— TTL-compatible inputs and outputs
— Automatic power-down when deselected
Replaces 8K × 8 Battery Backed (BB) SRAM, SRAM,
EEPROM, FeRAM, or Flash memory
Data is automatically Write protected during power loss
Write cycle endurance: >10
15
cycles
Data Retention: >10 Years
Shielded from external magnetic fields
Extra 64-bytes for device identification and tracking
Temperature ranges
—
Commercial: 0
°
C to 70
°
C
—
Industrial: –40
°
C to +85
°
C
JEDEC STD 28-pin DIP (600-mil), 28-pin (300-mil) SOIC
and 28-pin TSOP-1 packages. Also available in 450-mil
wide (300-mil body width) 28-pin narrow SOIC.
Functional Description
The CY9C6264 is a high-performance CMOS nonvolatile
RAM employing an advanced magnetic RAM (MRAM)
process. An MRAM is nonvolatile memory that operates as a
fast read and write RAM. It provides data retention for more
than ten years while eliminating the reliability concerns,
functional disadvantages, and system design complexities of
battery-backed SRAM, EEPROM, Flash and FeRAM. Its fast
writes and high write cycle endurance makes it superior to
other types of nonvolatile memory.
The CY9C6264 operates very similarly to SRAM devices.
Memory read and write cycles require equal times. The MRAM
memory is nonvolatile due to its unique magnetic process.
Unlike BBSRAM, the CY9C6264 is truly a monolithic nonvol-
atile memory. It provides the same functional benefits of a fast
write without the serious disadvantages associated with
modules and batteries or hybrid memory solutions.
These capabilities make the CY9C6264 ideal for nonvolatile
memory applications requiring frequent or rapid writes in a
byte wide environment.
The CY9C6264 is offered in both commercial and industrial
temperature ranges.
Pin Configurations
SOIC/DIP
LogicBlockDiagram
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
COLUMN
DECODER
R
S
INPUTBUFFER
WE
OE
I/O
0
CE
I/O
1
I/O
2
I/O
3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
20
19
18
17
21
24
23
22
Top View
25
28
27
26
GND
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
I/O
0
I/O
1
I/O
2
WE
CE
2
V
CC
A
3
A
2
A
1
OE
A
0
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
NC
CE
1
512 × 128
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
9
A
1
A
1
A
A
0
22
23
24
25
26
27
28
1
2
3
4
5
6
10
9
11
15
14
13
12
16
19
18
17
20
21
7
8
OE
A
1
A
2
A
3
CE
2
WE
V
CC
NC
A
4
A
5
A
6
A
7
A
8
A
9
A
0
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
12
A
11
A
10
TSOP I
Top View
(not to scale)
Silicon Sig.
POWER
DOWN &
WRITE
PROTECT
1
1
CE
2
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