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參數資料
| 型號： | CZT2955 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR |
| 中文描述： | 6 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 74K |
| 代理商： | CZT2955 |
MAXIMUM RATINGS:
(TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
VCER
VCEO
VEBO
IC
IB
PD
100
V
Collector-Emitter Voltage
70
V
Collector-Emitter Voltage
60
V
Emitter-Base Voltage
7.0
V
Collector Current
6.0
A
Base Current
3.0
A
Power Dissipation
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
Θ
JA
-65 to +150
°C
Thermal Resistance
62.5
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICEO
ICEV
IEBO
BVCER
BVCEO
* VCE(SAT)
* VBE(ON)
* hFE
* hFE
fT
VCE=30V
VCE=100V, VEB=1.5V
VEB=7.0V
IC=30mA, RBE=100
IC=30mA
IC=4.0A, IB=400mA
VCE=4.0V, IC=4.0A
VCE=4.0V, IC=4.0A
VCE=4.0V, IC=6.0A
VCE=10V, IC=500mA, f=1.0MHz
700
μA
1.0
mA
5.0
mA
70
V
60
V
1.1
V
1.5
V
20
70
5.0
2.5
MHz
* Pulsed, 2% D.C.
CZT2955 PNP
CZT3055 NPN
2.0W SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTOR
SOT-223 CASE
Central
Semiconductor Corp.
TM
R3 (17-June 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2955
and CZT3055 types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designed for surface mounted power amplifier
applications up to 6.0 amps.
MARKING CODE: FULL PART NUMBER
相關PDF資料 |
PDF描述 |
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| CZT2955PNP | 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR |
| CZT3055 | 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR |
| CZT3055NPN | 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR |
| CZT7090L | SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTO |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CZT2955 TR | 制造商:Central Semiconductor Corp 功能描述:PNP Power |
| CZT2955_10 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS |
| CZT2955PNP | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR |
| CZT2955-TR | 功能描述:兩極晶體管 - BJT PNP Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CZT2955TR-LF | 制造商:Central Semiconductor Corp 功能描述: |
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