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參數資料
| 型號： | CZT651 |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | SOT-223 |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁|甲一（c）|的SOT - 223 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 247K |
| 代理商： | CZT651 |
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT651
type is a NPN Silicon Transistor manufactured
by the epitaxial planar process, epoxy molded in
a surface mount package, designed for high cur-
rent applications
MAXIMUM RATINGS:
(TA=25°C)
UNITS
V
V
V
A
W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
80
60
5.0
2.0
2.0
TJ,Tstg
Θ
JA
-65 to +150
62.5
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
TEST CONDITIONS
VCB=80V
VEB=4.0V
IC=100
μ
A
IC=10mA
IE=10
μ
A
IC=1.0A, IB=100mA
IC=2.0A, IB=200mA
IC=1.0A, IB=100mA
VCE=2.0V, IC=1.0A
VCE=2.0V, IC=50mA
VCE=2.0V, IC=500mA
VCE=2.0V, IC=1.0A
VCE=2.0V, IC=2.0A
VCE=5.0V, IC=50mA, f=100MHz
MIN
MAX
100
100
UNITS
nA
nA
V
V
V
V
V
V
V
80
60
5.0
0.3
0.5
1.2
1.0
75
75
75
40
75
MHz
CZT651
SURFACE MOUNT
NPN HIGH CURRENT TRANSISTOR
SOT-223 CASE
Central
Semiconductor Corp.
TM
R1 ( 01-Feb 2001)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CZT651_10 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR |
| CZT7090L | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTO |
| CZT7090L_10 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTOR |
| CZT7090LE | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTOR |
| CZT7120 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT PNP SILICON SWITCHING POWER TRANSISTOR |
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