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參數資料
| 型號： | D2214UK |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 8A I(D) | SOT-391BVAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 40V的五（巴西）直| 8A條（丁）|的SOT - 391BVAR |
| 文件頁數： | 1/2頁 |
| 文件大小： | 23K |
| 代理商： | D2214UK |
D2214UK
Document Number: 3042
Issue: 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukSemelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
42W
40V
±20V
8A
–65 to 150°C
200°C
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 1GHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND
APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS
from DC to 1GHz
METAL GATE RF SILICON FET
TetraFET
DP
PIN 1
SOURCE
PIN 2
DRAIN
PIN 3
GATE
DIM
A
B
C
D
E
F
G
H
mm
16.51
6.35
45°
1.52
6.35
0.13
3.56
0.64
Tol.
0.25
0.13
5°
0.13
0.13
0.03
0.51
0.13
Inches
0.650
0.250
45°
0.060
0.250
0.005
0.140
0.024
Tol.
0.010
0.005
5°
0.005
0.005
0.001
0.020
0.005
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