- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄376530 > D45C11 (FAIRCHILD SEMICONDUCTOR CORP) PNP Current Driver Transistor(PNP電流驅(qū)動(dòng)器晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | D45C11 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | PNP Current Driver Transistor(PNP電流驅(qū)動(dòng)器晶體管) |
| 中文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 354K |
| 代理商： | D45C11 |
D
D45C11
PNP Current Driver Transistor
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 5P. See
NZT751 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
I
C
Collector-Emitter Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
80
4.0
V
A
°
C
T
J
, T
stg
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
-55 to +150
NZT45C11
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
D45C11
60
480
2.1
62.5
*NZT45C11
1.2
9.7
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
W
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
103
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
TO-220
B
C
E
B
C
C
SOT-223
E
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| D45H2A | PNP Power Amplifier |
| D45H2A | POWER TRANSISTORS(10A,30V,60W) |
| D45H5 | PNP SILICON POWER TRANSISTORS |
| D45H5 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| D45H5 | POWER TRANSISTORS(10A,30-80V,50W) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| D45C11_10 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:PNP Current Driver Transistor |
| D45C12 | 功能描述:兩極晶體管 - BJT 4A 80V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| D45C12G | 功能描述:兩極晶體管 - BJT 4A 80V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| D45C12G | 制造商:ON Semiconductor 功能描述:RF BIPOLAR TRANSISTOR |
| D45C2 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 220 4 Amp Silicon Transistor 制造商:Harris Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。