| 型號 | 廠商 | 描述 |
| psd935g1-a-20ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-a-20m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-a-20mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 33000uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-0.25pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate |
| psd935g1-a-20u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-a-20ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 33000uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-0.25pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
| psd935g1-a-70b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-a-70b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-a-70j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-a-70ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-a-70m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-a-70mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-a-70u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-15mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-15u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-15ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-20b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-20b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-20j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-20ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-20m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-20mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-20u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-20ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 36pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate |
| psd935g1-b-70b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-70b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-70j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-70ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-70m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-70mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 36pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
| psd935g1-b-70u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-b-70ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-20b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-20b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-20j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-20ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-20m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 360pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
| psd935g1-c-20mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 360pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
| psd935g1-c-20u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-20ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-70b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-70b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-70j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-70ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 36000uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-0.1pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
| psd935g1-c-70m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 36000uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-0.1pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
| psd935g1-c-70mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-70u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-70ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-90b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-90b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1-c-90j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |