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參數資料
| 型號： | DBDF200R12KE330 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 151K |
| 代理商： | DBDF200R12KE330 |
I
C, nom
I
C
200
295
A
A
min.
typ.
max.
-
1,7
2,15
V
-
2,0
-
V
Gate Schwellenspannung
gate threshold voltage
I
C
= 8mA, V
CE
= V
GE
, T
vj
= 25°C
gate charge
Gateladung
V
GE
= -15V...+15V
Grenzlastintegral
I2t value
5,0
5,8
nA
-
400
0,5
1,9
-
μC
t
p
= 1ms
I
FRM
400
A
T
c
= 25°C; Transistor
repetitive peak collector current
t
p
= 1ms, T
c
= 80°C
Periodischer Kollektor Spitzenstrom
Gesamt Verlustleistung
total power dissipation
V
gate emitter peak voltage
200
Gate Emitter Spitzenspannung
Dauergleichstrom
DC forward current
A
T
c
= 25°C
DC collector current
reverse transfer capacitance
Rückwirkungskapazitt
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
Kollektor Emitter Sperrspannung
collector emitter voltage
T
c
= 80°C
Kollektor Dauergleichstrom
T
vj
= 25°C
V
CES
400
-
-
+/- 20
7,8
-
V
GE(th)
C
ies
Q
G
I
GES
date of publication: 2002-10-07
revision: 3.0
approved: SM TM; Wilhelm Rusche
V
GE
= 0V, T
vj
= 25°C, V
CE
= 600V
prepared by: MOD-D2; Mark Münzer
gate emitter leakage current
Gate Emitter Reststrom
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
Kollektor Emitter Reststrom
collector emitter cut off current
Technische Information / technical information
DF200R12KE3
IGBT-Module
IGBT-Modules
2,5
kV
I
F
1200
V
W
k A2s
I
CRM
P
tot
Periodischer Spitzenstrom
repetitive peak forward current
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
A
1040
Elektrische Eigenschaften / electrical properties
Hchstzulssige Werte / maximum rated values
V
GES
I2t
-
input capacitance
insulation test voltage
RMS, f= 50Hz, t= 1min.
V
ISOL
Isolations Prüfspannung
V
CEsat
Charakteristische Werte / characteristic values
V
nF
nF
14
-
6,5
-
Transistor Wechselrichter / transistor inverter
Eingangskapazitt
Kollektor Emitter Sttigungsspannung
collector emitter saturation voltage
I
C
= 200A, V
GE
= 15V, T
vj
= 25°C
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
I
C
= 200A, V
GE
= 15V, T
vj
= 125°C
I
CES
C
res
mA
-
-
5
1 (8)
DB_DF200R12KE3_3.0
2002-10-07
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