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參數(shù)資料
型號(hào): DD28F032SA-150
廠商: INTEL CORP
元件分類: DRAM
英文描述: 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY
中文描述: 4M X 8 FLASH 12V PROM, 150 ns, PDSO56
封裝: 14 X 20 MM, 1.20 MM HEIGHT, TSOP-56
文件頁(yè)數(shù): 1/49頁(yè)
文件大小: 1402K
代理商: DD28F032SA-150
E
December 1996
Order Number: 290490-005
n
User-Selectable 3.3V or 5V V
CC
n
User-Configurable x8 or x16 Operation
n
70 ns Maximum Access Time
n
28.6 MB/sec Burst Write Transfer Rate
n
1 Million Typical Erase Cycles per Block
n
56-Lead, 1.2 x 14 x 20 mm Advanced
Dual Die TSOP Package Technology
n
64 Independently Lockable Blocks
n
Revolutionary Architecture
100% Backwards-Compatible with
Intel 28F016SA
Pipelined Command Execution
Program during Erase
n
2 mA Typical I
CC
in Static Mode
n
2 μA Typical Deep Power-Down
n
State-of-the-Art 0.6 μm ETOX IV Flash
Technology
Intel’s DD28F032SA 32-Mbit FlashFile memory is a revolutionary architecture which enables the design of
truly mobile, high performance, personal computing and communication products. With innovative
capabilities, low power operation and very high read/program performance, the DD28F032SA is also the ideal
choice for designing embedded mass storage flash memory systems.
The DD28F032SA is the result of highly-advanced packaging innovation which encapsulates two 28F016SA
die in a single Dual Die Thin Small Outline Package (DDTSOP).
The DD28F032SA is the highest density, highest performance nonvolatile read/program solution for solid-
state storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F016SA
16-Mbit FlashFile memory), very high-cycling, low-power 3.3V operation, very fast program and read
performance and selective block locking provide a highly flexible memory component suitable for high-density
memory cards, Resident Flash Arrays and PCMCIA-ATA Flash Drives. The DD28F032SA’s dual read voltage
enables the design of memory cards which can be read/written in 3.3V and 5.0V systems interchangeably. Its
x8/x16 architecture allows the optimization of memory to processor interface. The flexible block locking option
enables bundling of executable application software in a Resident Flash Array or memory card. The
DD28F032SA will be manufactured on Intel’s 0.6 μm ETOX IV technology.
DD28F032SA
32-MBIT (2 MBIT X 16, 4 MBIT X 8)
FlashFile MEMORY
相關(guān)PDF資料
PDF描述
DD28F032SA100 x8/x16 Flash EEPROM
DD28F032SA70 x8/x16 Flash EEPROM
DD28F032SA 32-Mbit (2 Mbit x 16,4 Mbit x 8) FlashFile Memory(32-M位 (2 M位 x 16,4 M位 x 8) FlashFile存儲(chǔ)器)
DD311A Interface IC
DD111 Interface IC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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