型號: | DF2S5.6S |
廠商: | Toshiba Corporation |
英文描述: | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.76 to 11.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
中文描述: | 產品使用,但對靜電放電(ESD)保護。 |
文件頁數: | 2/3頁 |
文件大小: | 125K |
代理商: | DF2S5.6S |
相關PDF資料 |
PDF描述 |
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DF2S6.2FS | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.10 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
DF2S6.8FS | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
DF2S6.8S | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 11.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
DF2S8.2FS | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.74 to 12.24; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
DF2S8.2S | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.08 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
相關代理商/技術參數 |
參數描述 |
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DF2S6.2FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Product for Use Only as Protection against Electrostatic Discharge (ESD). |
DF2S6.2FS(TPL3) | 制造商:Toshiba America Electronic Components 功能描述:Diode,ESD Pro,Vz=6.2V,Ir(max)=1#?A,fSC |
DF2S6.2FSTPL3 | 制造商:Toshiba America Electronic Components 功能描述:TVS DIODE 5VWM |
DF2S6.8CT(TPL3) | 功能描述:ESD 抑制器 ZENER DIODE RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
DF2S6.8FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Product for Use Only as Protection against Electrostatic Discharge (ESD). |