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參數(shù)資料
| 型號： | DF3A3.6FV |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| 中文描述： | 產(chǎn)品使用，但對靜電放電（ESD）保護。 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 136K |
| 代理商： | DF3A3.6FV |
DF3A3.6FV
2007-11-01
2
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±
30 kV
Criterion: No damage to device elements
Marking
Equivalent Circuit
(top view)
IZ - VZ
0
0
0
1
10
100
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
0.001
Ta=25°C
ZENER VOLTAGE VZ (V)
Z
CT - VR
10
100
1000
0
1
2
3
4
5
Ta=25°C
f=1MHz
T
REVERSE VOLTAGE VR (V)
3.6
相關PDF資料 |
PDF描述 |
|---|---|
| DF3A5.6FE | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.34 to 14.98; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A5.6FU | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.85 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A5.6FV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A5.6LFE | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 16.01; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A5.6LFV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
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