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參數(shù)資料
| 型號： | DF5A8.2LF |
| 廠商： | Toshiba Corporation |
| 英文描述： | Diodes for Protecting Against ESD |
| 中文描述： | 二極管，不受ESD保護(hù) |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 94K |
| 代理商： | DF5A8.2LF |
DF5A8.2LF
2002-01-16
1
TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type
DF5A8.2LF
Diodes for Protecting Against ESD
Because four devices are mounted on an ultra compact package, it is
possible to allow reducing the number of the parts and the mounting
cost.
Zener voltage correspond to E24 Series.
Low total capacitance: C
T
= 5.0 pF (typ.)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
P
200
mW
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55 to 125
°C
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Zener voltage
V
Z
I
Z
5 mA
7.8
8.2
8.6
V
Dynamic impedance
Z
Z
I
Z
5 mA
60
Knee dynamic impedance
Z
ZK
I
Z
0.5 mA
100
Reverse current
I
R
V
R
5 V
0.5
A
Total capacitance
C
T
V
R
0 V, f 1 MHz
5.0
pF
Guaranteed Level of ESD Immunity
Marking
Equivalent Circuit
(top view)
Test Condition
ESD Immunity Level
IEC61000-4-2
(contact discharge)
6 kV
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-3H1A
F U
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