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參數資料
| 型號： | DG648BH45 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Gate Turn-off Thyristor |
| 中文描述： | 1169.65 A, 4500 V, GATE TURN-OFF SCR |
| 封裝： | H, 4 PIN |
| 文件頁數： | 3/19頁 |
| 文件大小： | 221K |
| 代理商： | DG648BH45 |
DG648BH45
3/19
CHARACTERISTICS
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
-
6000
V
RGM
= 16V, No gate/cathode resistor
μ
C
I
T
= 2000A, V
DM
= V
DRM
Snubber Cap Cs = 2.0
μ
F,
di
GQ
/dt = 40A/
μ
s
T
j
= 125
o
C unless stated otherwise
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
I
GQM
Min.
Max.
Units
-
3.2
V
V
DRM
= 4500V, V
RG
= 0V
-
100
mA
At V
RRM
-
50
mA
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1.0
V
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
3.0
A
mA
mJ
3170
-
V
D
= 3000V
I
T
= 2000A, dI
T
/dt = 300A/
μ
s
I
FG
= 30A, rise time < 1.0
μ
s
μ
s
1.35
-
-
3.2
μ
s
-
10000
mJ
-
20.0
μ
s
μ
s
2.0
-
μ
s
22.0
-
-
12000
μ
C
-
690
A
At 2000A peak, I
G(ON)
= 7A d.c.
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