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| 型號： | DIM400WHS17-E |
| 英文描述： | IGBT Modules - Half Bridge |
| 中文描述： | IGBT模塊-半橋 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 265K |
| 代理商： | DIM400WHS17-E |
DIM400GCM33-A000
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
100
200
300
400
500
600
700
800
0
6
Collector-emitter voltage, V
ce
- (V)
C
C
1
2
3
4
5
V
ge
=10V
V
ge
=12V
V
ge
=15V
V
ge
=20V
Common emitter.
T
case
= 25
C.
V
is measured at power busbars
and not the auxiliary terminals
0
100
200
300
400
500
600
700
800
0
8
Collector-emitter voltage, V
ce
- (V)
C
C
1
2
3
4
5
6
7
V
ge
=10V
V
ge
=12V
V
ge
=15V
V
ge
=20V
Common emitter.
T
case
= 125
C.
V
ce
is measured at power busbars
and not the auxiliary terminals
0
100
200
300
400
500
600
700
800
0
100
200
300
400
500
Collector current, I
C
- (A)
S
s
E
on
(mJ)
E
off
(mJ)
E
rec
(mJ)
Conditions:
T
case
= 125
C,
R
g
V
cc
= 1800V,
C
ge
= 68nF
0
200
400
600
800
1000
1200
1400
3
5
9
10
11
Gate resistance, R
g
- (ohms)
S
s
4
6
7
8
E
on
(mJ)
E
off
(mJ)
E
rec
(mJ)
Conditions:
T
case
= 125
C,
I
C
= 400A,
V
cc
= 1800V,
C
ge
= 68nF
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