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參數資料
型號: DIM50CHS12-E
英文描述: IGBT Modules - Half Bridge
中文描述: IGBT模塊-半橋
文件頁數: 1/9頁
文件大小: 145K
代理商: DIM50CHS12-E
DIM500BSS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9
DS5677-1.3 February 2004
KEY PARAMETERS
V
CES
V
CE(sat)
*
I
C
I
C(PK)
*(measured at the power busbars and not the auxiliary terminals)
600V
(typ)
2.1V
(max) 500A
(max) 1000A
FEATURES
I
n - Channel
I
High Switching Speed
I
Low Forward Voltage Drop
I
Isolated Base
APPLICATIONS
I
PWM Motor Contro
l
I
UPS
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
The DIM500BSS06-S000 is a single switch 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
ORDERING INFORMATION
Order as:
DIM500BSS06-S000
Note: When ordering, use complete part number.
DIM500BSS06-S000
Single Switch IGBT Module
Fig. 1 Single switch circuit diagram
Fig. 2 Module outline
Outline type code:
B
(See package details for further information)
2(E)
5(E
1
)
3(G
1
)
1(C)
4(C
1
)
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相關代理商/技術參數
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