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| 型號(hào)： | DIM500BSS06-S |
| 英文描述： | IGBT Modules - Single Switch |
| 中文描述： | IGBT模塊-單開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大小： | 145K |
| 代理商： | DIM500BSS06-S |
DIM500BSS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
7/9
Fig.8 Transient thermal impedance
Fig.7 Reverse bias safe operating area
Fig.6 Diode typical forward characteristics
Fig.7 Diode reverse bias safe operating area
0
100
200
300
400
500
600
700
800
900
1000
0
0.5
1.0
Foward voltage, V
F
- (V)
1.5
2.0
2.5
3.0
F
F
T
j
= 25
C
T
j
= 125
C
V
F
is measured at power busbars
and not the auxiliary terminals
0
100
200
300
400
600
500
700
800
900
1000
1100
1200
0
200
Collector-emitter voltage, V
ce
- (V)
400
600
800
C
C
T
j
= 125
C
V
ge
= ±15V
R
g
= 4.7 Ohms
Module I
C
Chip I
C
0
50
100
150
200
250
300
350
400
0
100
200
300
400
500
600
700
Reverse voltage, V
R
- (V)
R
r
T
j
= 125
C
1
10
100
1000
0.001
0.01
1
0.1
10
Pulse width, t
p
- (s)
T
t
°
C
Transistor
Diode
IGBT
Diode
R
(C/KW)
τ
i
(ms)
R
i
(C/KW)
τ
i
(ms)
1
1.2705
0.1069
2.3216
0.0895
2
5.0322
4.363
12.9104
2.6571
3
6.8123
21.9182
12.0804
17.3886
4
40.8577
92.4022
73.9553
71.8108
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