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參數(shù)資料
| 型號(hào)： | DIM800JSM33-A |
| 英文描述： | IGBT Modules - Single Switch |
| 中文描述： | IGBT模塊-單開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大小： | 203K |
| 代理商： | DIM800JSM33-A |
DIM800NSM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
μ
C
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
1300
200
850
500
250
920
10
370
780
440
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
±
15V
V
CE
= 1800V
R
G(ON)
= R
G(OFF)
= 2.2
C
ge
= 150nF
L ~ 100nH
I
F
= 800A, V
CE
= 1800V,
dI
F
/dt = 5200A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
rec
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1600
250
900
500
300
1500
650
800
760
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
±
15V
V
CE
= 1800V
R
G(ON)
= R
G(OFF)
= 2.2
C
ge
= 150nF
L ~ 100nH
I
F
= 800A, V
CE
= 1800V,
dI
F
/dt = 3600A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DIM800NSM33-A | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:IGBT Modules - Single Switch |
| DIM800NSM33A000 | 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR |
| DIM800NSM33-A000 | 制造商:DYNEX 制造商全稱(chēng):Dynex Semiconductor 功能描述:Single Switch IGBT Module Preliminary Information |
| DIM800NSM33-F | 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR |
| DIM800NSM33-F000 | 制造商:DYNEX 制造商全稱(chēng):Dynex Semiconductor 功能描述:Single Switch IGBT Module |
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