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參數(shù)資料
| 型號： | DMMT5401 |
| 廠商： | Diodes Inc. |
| 英文描述： | MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 匹配進步黨小信號晶體管表面貼裝 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 86K |
| 代理商： | DMMT5401 |
DS30437 Rev. 1 - 2
1 of 3
DMMT5401
www.diodes.com
Diodes Incorporated
Epitaxial Planar Die Construction
Complementary NPN Type Available
(DMMT5551)
Ideal for Medium Power Amplification and
Switching
Intrinsically Matched PNP Pair (Note 1)
2% Matched Tolerance, h
FE
, V
CE(SAT)
, V
BE(SAT)
1% Matched Tolerance, Available (Note 2)
Also Available in Lead Free Version
Mechanical Data
Case: SOT-26, Molded Plastic
Case Material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K4S
Order & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 8, on Page 2
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
M
J
L
D
F
B C
H
K
C
2
B
2
E
2
B
1
E
1
C
1
DMMT5401
MATCHED PNP SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Notes: 1. Built with adjacent die from a single wafer.
2. Contact the Diodes, Inc. Sales department.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Maximum combined dissipation.
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
DMMT5401
-160
-150
-5.0
-200
300
417
-55 to +150
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Power Dissipation (Note 3, 4)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage and Temperature Range
K/W
C
T
C
U
D
O
R
P
W
E
N
SOT-26
Min
Dim
A
B
C
D
F
H
J
K
L
M
Max
Typ
0.35
0.50
0.38
1.50
1.70
1.60
2.70
3.00
2.80
0.95
0.55
2.90
3.10
3.00
0.013 0.10
0.05
1.00
1.30
1.10
0.35
0.55
0.40
0.10
0.20
0.15
0
8
All Dimensions in mm
C
2
E
2
E
1
C
1
B
2
B
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DMMT5401_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DMMT5401_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DMMT5401-7 | 功能描述:兩極晶體管 - BJT MATCHED PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| DMMT5401-7-F | 功能描述:兩極晶體管 - BJT MATCHED PNP SM SIGNAL TRANS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| DMMT5401-TP | 功能描述:TRANSISTOR PNP 200MA 150V SOT363 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
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