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參數資料
| 型號： | DMN5L06T-7 |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 280 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, ULTRA SMALL, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 143K |
| 代理商： | DMN5L06T-7 |
Lead-free Green
DS30721 Rev. 2 - 2
1 of 5
DMN5L06T
www.diodes.com
Diodes Incorporated
DMN5L06T
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
N-Channel MOSFET
Low On-Resistance
Very
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
“Green” Device (Note 3)
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
50
V
Drain-Gate Voltage R
GS
1.0M
V
DGR
50
V
Gate-Source Voltage
Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 1)
Continuous
I
D
280
mA
Drain Current (Note 1) Pulsed
I
DM
1.5
A
Total Power Dissipation (Note 1)
P
d
150
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
JA
833
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Mechanical Data
Case: SOT-523
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish
leadframe. Solderable per MIL-STD-202, Method 208
Matte Tin annealed over Alloy 42
Marking: Date Code and Type Code, See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
.
Source
EQUIVALENT CIRCUIT
Gate
Drain
A
B
C
G
M
L
J
D
H
N
K
TOP VIEW
D
G
S
SOT-523
Min
Dim
A
B
C
D
G
H
J
K
L
M
N
All Dimensions in mm
Max
Typ
0.15
0.30
0.22
0.75
0.85
0.80
1.45
1.75
1.60
0.50
0.90
1.10
1.00
1.50
1.70
1.60
0.00
0.10
0.05
0.60
0.80
0.75
0.10
0.30
0.22
0.10
0.20
0.12
0.45
0.65
0.50
N
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相關代理商/技術參數 |
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| DMN5L06TK | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06TK-7 | 功能描述:MOSFET .15W 50V .28A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN5L06V | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06V-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN5L06VA | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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