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參數(shù)資料
| 型號： | DMP2012SN |
| 廠商： | Diodes Inc. |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | P溝道增強型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 171K |
| 代理商： | DMP2012SN |
DMP2012SN
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
N
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
D
G
S
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SC-59
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Weight: 0.008 grams (approximate)
SC-59
Dim
Min
Max
A
0.30
0.50
B
1.40
1.80
C
2.50
3.00
D
0.85
1.05
E
0.30
0.70
G
1.70
2.10
H
2.70
3.10
J
0.10
K
1.00
1.40
L
0.55
0.70
M
0.10
0.35
α
0
°
8
°
All Dimensions in mm
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
ESD protected
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
V
GSS
I
D
I
DM
P
d
R
θ
JA
T
j
, T
STG
-20
V
Gate-Source Voltage
±
12
V
Drain Current (Note 1) Steady State
-0.7
A
Pulsed Drain Current (Note 3)
-2.8
A
Total Power Dissipation (Note 1)
500
mW
Thermal Resistance, Junction to Ambient
250
°
C/W
°
C
Operating and Storage Temperature Range
-65 to +150
Notes:
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width
≤
10
μ
S, Duty Cycle
≤
1%.
DS30790 Rev. 2 - 2
1 of 4
www.diodes.com
DMP2012SN
Diodes Incorporated
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DMP2012SN_0711 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMP2012SN-7 | 功能描述:MOSFET 20V 700mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMP2018LFK | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMP2018LFK-13 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMP2018LFK-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V U-DFN2523-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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