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參數資料
| 型號： | DS1220AD |
| 英文描述： | 16k Nonvolatile SRAM |
| 中文描述： | 16k非易失SRAM |
| 文件頁數： | 1/9頁 |
| 文件大小： | 136K |
| 代理商： | DS1220AD |
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111899
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Directly replaces 2k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 24-pin DIP package
Read and write access times as fast as 100 ns
Lithium energy source is electrically
disconnected to retain freshness until power
is applied for the first time
Full ±10% V
CC
operating range (DS1220AD)
Optional ±5% V
CC
operating range
(DS1220AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
PIN ASSIGNMENT
24-Pin ENCAPSULATED PACKAGE
720-mil EXTENDED
PIN DESCRIPTION
A0-A10
DQ0-DQ7
CE
WE
OE
V
CC
GND
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
DESCRIPTION
The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs
organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and
control circuitry which constantly monitors V
CC
for an out-of-tolerance condition. When such a condition
occurs, the lithium energy source is automatically switched on and write protection is unconditionally
enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs
directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of
the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance.
There is no limit on the number of write cycles that can be executed and no additional support circuitry is
required for microprocessor interfacing.
DS1220AB/AD
16k Nonvolatile SRAM
www.dalsemi.com
14
13
VCC
A8
A9
WE
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
DQ3
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| DS1227S | KickStarter Chip |
| DS1228 | Low-Noise, High-Speed, 16-Bit Accurate CMOS Operational Amplifier 8-SOIC -40 to 125 |
| DS1230W-100 | 3.3V 256k Nonvolatile SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DS1220AD-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-100+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-100IND | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-100-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AD-100IND+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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