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參數資料
| 型號： | DSEE29-06CC |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HiPerDynFRED Epitaxial Diode(正向電流30A的HiPerDynFRED外延型二極管) |
| 中文描述： | 30 A, 300 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, ISOPLUS220, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 59K |
| 代理商： | DSEE29-06CC |
HiPerDynFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
I
FAV
V
RRM
= 600 V
t
rr
= 30 ns
= 30 A
V
RRM
V
V
RRM
V
Type
600
300
DSEE29-06CC
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
I
FSM
E
AS
60
30
A
A
T
C
= 115°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
200
A
T
VJ
= 25°C; non-repetitive
I
AS
= 3 A; L = 180 μH
1.2
mJ
I
AR
T
VJ
T
VJM
T
stg
T
L
P
tot
V
ISOL
F
C
Weight
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
0.3
A
-55...+175
175
-55...+150
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s 260
°
C
T
C
= 25°C
165
W
50/60 Hz RMS; I
ISOL
≤
1 mA
2500
V~
Mounting force
11...65 / 2.5...15 N / lb
typical
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25°C
V
R
= V
RRM
100
μA
T
VJ
= 150°C V
R
= V
RRM
1
mA
V
F
I
F
= 30 A;
T
VJ
= 125°C
T
VJ
= 25°C
1.01
1.26
V
V
R
thJC
R
thCH
t
rr
0.9
K/W
K/W
0.6
I
F
= 1 A; -di/dt = 200 A/μs;
V
R
= 30 V
30
ns
I
RM
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/μs
T
VJ
= 100°C
4.5
7
A
98815 (04/01)
2001 IXYS All rights reserved
DSEE29-06CC
ADVANCE TECHNICAL INFORMATION
1 2 3
* Patent pending
ISOPLUS220
TM
3
2
Isolated back surface *
1
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Diodes connected in series
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
μ
s, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
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| DSEE8-06CC | HiPerDynFRED Epitaxial Diode(HiPerDynFRED外延型二極管) |
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| DSEI12-10A | Fast Recovery Epitaxial Diode (FRED) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DSEE29-12CC | 功能描述:整流器 30 Amps 1200V 2.5 Rds RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| DSEE30-12A | 功能描述:整流器 1200V 30A RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| DSEE55-24N1F | 功能描述:整流器 55 Amps 1200V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| DSEE6-06CC | 功能描述:整流器 6 Amps 600V 2.7 Rds RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| DSEE8-06CC | 功能描述:整流器 10 Amps 600V 1.75 Rds RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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