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參數資料
| 型號： | DT455N |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 11.5 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 89K |
| 代理商： | DT455N |
D
S
11609 Rev. C-4
1 of 4
DT455N
DT455N
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Thermal Characteristics
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
the solder mounting surface of the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user’s board design.
1a. With 1 in
oz 2 oz. copper mounting pad R
JA = 42°C/W.
1b. With 0.0066 in
oz 2 oz. copper mounting pad R
JA = 95°C/W.
1c. With 0.0123 in
2
oz 2 oz. copper mounting pad R
JA = 110°C/W.
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
20
V
Drain Current
Note 1a Continuous
Pulsed
I
D
±11.5
±40
A
Maximum Power Dissipation
Note 1a
Note 1b
Note 1c
P
d
3.0
1.3
1.1
W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
High Cell Density DMOS Technology
Low On-State Resistance
High Power and Current Capability
Fast Switching Speed
High Transient Tolerance
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction-to-Ambient
Note 1
R
JA
42
°C/W
Thermal Resistance, Junction-to-Case
R
JC
12
°C/W
Features
Maximum Ratings
25°C unless otherwise specified
D
G
D
S
A
B
C D
G
H
J
K
L
M
N
P
R
S
E
Mechanical Data
SOT-223 Plastic Case
Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
SOT-223
Dim
Min
Max
A
6.30
6.71
B
2.90
3.10
C
6.71
7.29
D
3.30
3.71
E
2.22
2.35
G
0.92
1.00
H
1.10
1.30
J
1.55
1.80
K
0.025
0.102
L
0.66
0.79
M
4.55
4.70
N
—
10°
P
10°
16°
R
0.254
0.356
S
10°
16°
All Dimensions in mm
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相關代理商/技術參數 |
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