| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| IPW65R420CFD | Infineon Technologies | MOSFET N-CH 650V 8.7A TO247 | 0 | 1:$4.09000 10:$3.65300 100:$2.99550 250:$2.70324 500:$2.42560 1,000:$2.04568 2,500:$1.94340 5,000:$1.86303 10,000:$1.81189 |
| BSC109N10NS3 G | Infineon Technologies | MOSFET N-CH 100V 63A 8TDSON | 0 | 1:$2.16000 10:$1.85000 25:$1.66440 100:$1.51040 250:$1.35632 500:$1.17136 1,000:$0.98640 2,500:$0.89392 |
| BSC109N10NS3 G | Infineon Technologies | MOSFET N-CH 100V 63A 8TDSON | 0 | 1:$2.16000 10:$1.85000 25:$1.66440 100:$1.51040 250:$1.35632 500:$1.17136 1,000:$0.98640 2,500:$0.89392 |
| IPB65R190CFD | Infineon Technologies | MOSFET N-CH 650V 17.5A TO263 | 0 | 1,000:$2.60316 2,000:$2.47300 5,000:$2.37074 10,000:$2.30566 25,000:$2.23128 |
| IPD90N04S4-02 | Infineon Technologies | MOSFET N-CH 40V 90A TO252-3-313 | 0 | 2,500:$0.80068 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 650V |
| 電流 - 連續漏極(Id) @ 25° C: | 8.7A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 420 毫歐 @ 3.4A，10V |
| Id 時的 Vgs(th)（最大）: | 4.5V @ 340µA |
| 閘電荷(Qg) @ Vgs: | 32nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 870pF @ 100V |
| 功率 - 最大: | 83.3W |
| 安裝類型: | 通孔 |
| 封裝/外殼: | TO-247-3 |
| 供應商設備封裝: | PG-TO247-3 |
| 包裝: | 管件 |