| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SI4493DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 10A 8SOIC | 0 | 2,500:$1.10700 |
| SI4401DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 0 | 2,500:$1.09755 |
| SIR882ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 60A POWERPAK | 0 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIR882ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 60A POWERPAK | 0 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIR882ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 60A POWERPAK | 0 | 3,000:$1.09350 6,000:$1.05300 15,000:$1.01250 30,000:$0.99225 75,000:$0.97200 |
| SIE882DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 25V POLARPAK | 0 | 3,000:$1.09350 |
| IRL640STRRPBF | Vishay Siliconix | MOSFET N-CH 200V 17A D2PAK | 0 | 800:$1.09305 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續漏極(Id) @ 25° C: | 10A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 7.75 毫歐 @ 14A，4.5V |
| Id 時的 Vgs(th)（最大）: | 1.4V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 110nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.5W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |