| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SIS407DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1212-8 PPAK | 0 | 3,000:$0.40600 6,000:$0.38570 15,000:$0.36975 30,000:$0.35960 75,000:$0.34800 |
| SIHP5N50D-E3 | Vishay Siliconix | MOSFET N-CH 500V 5.3A TO220AB | 0 | 1,000:$0.58905 2,000:$0.54978 5,000:$0.52229 10,000:$0.50069 25,000:$0.48695 50,000:$0.47124 |
| SIS438DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V PPAK 1212-8 | 200 | 1:$0.95000 25:$0.73120 100:$0.64500 250:$0.55900 500:$0.47300 1,000:$0.37625 |
| SIS438DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V PPAK 1212-8 | 200 | 1:$0.95000 25:$0.73120 100:$0.64500 250:$0.55900 500:$0.47300 1,000:$0.37625 |
| SI3424DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 5A 6-TSOP | 0 | 3,000:$0.58800 |
| SI7425DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 12V PPAK 1212-8 | 0 | 3,000:$0.58660 |
| SIS438DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V PPAK 1212-8 | 0 | 3,000:$0.31175 6,000:$0.29025 15,000:$0.27950 30,000:$0.26875 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續漏極(Id) @ 25° C: | 25A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 9.5 毫歐 @ 15.3A，4.5V |
| Id 時的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 93.8nC @ 8V |
| 輸入電容 (Ciss) @ Vds: | 2760pF @ 10V |
| 功率 - 最大: | 33W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? 1212-8 |
| 供應商設備封裝: | PowerPAK? 1212-8 |
| 包裝: | 帶卷 (TR) |