| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| BSH205,215 | NXP Semiconductors | MOSFET P-CH 12V 750MA SOT-23 | 23,980 | 1:$0.63000 10:$0.55600 25:$0.49160 100:$0.42840 250:$0.37292 500:$0.31744 1,000:$0.25427 |
| PSMN8R0-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 54A LL LFPAK | 1,850 | 1:$0.62000 10:$0.52000 25:$0.45560 100:$0.39000 250:$0.33820 500:$0.28648 |
| PSMN8R0-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 54A LL LFPAK | 1,850 | 1:$0.62000 10:$0.52000 25:$0.45560 100:$0.39000 250:$0.33820 500:$0.28648 |
| PSMN8R0-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 54A LL LFPAK | 1,500 | 1,500:$0.21454 3,000:$0.19561 7,500:$0.18299 10,500:$0.17037 37,500:$0.16154 75,000:$0.15775 150,000:$0.15144 |
| PSMN7R5-25YLC,115 | NXP Semiconductors | MOSFET N-CH 25V 56A LL LFPAK | 2,000 | 1:$0.62000 10:$0.52000 25:$0.45560 100:$0.39000 250:$0.33820 500:$0.28648 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 12V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 750mA |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 400 毫歐 @ 430mA，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 680mV @ 1mA |
| 閘電荷(Qg) @ Vgs: | 3.8nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 200pF @ 9.6V |
| 功率 - 最大: | 417mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應(yīng)商設(shè)備封裝: | TO-236AB |
| 包裝: | Digi-Reel® |