| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| DMG4435SSS-13 | Diodes Inc | MOSFET P-CH 30V 7.3A 8SOIC | 0 | 2,500:$0.20150 5,000:$0.18850 12,500:$0.17550 25,000:$0.16640 62,500:$0.16250 125,000:$0.15600 |
| DMN2015UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6E | 5,960 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
| DMN2015UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6E | 5,960 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
| DMN2013UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6 | 5,765 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
| DMN2013UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6 | 5,765 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
| DMN2013UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6 | 3,000 | 3,000:$0.20150 6,000:$0.18850 15,000:$0.17550 30,000:$0.16640 75,000:$0.16250 150,000:$0.15600 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 7.3A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 16 毫歐 @ 11A，20V |
| Id 時的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 35.4nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1614pF @ 15V |
| 功率 - 最大: | 1.3W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設(shè)備封裝: | 8-SOP |
| 包裝: | 帶卷 (TR) |