| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SIR882DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 8-SOIC | 2,836 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIR882DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 8-SOIC | 0 | 3,000:$1.09350 6,000:$1.05300 15,000:$1.01250 30,000:$0.99225 75,000:$0.97200 |
| SI1400DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V SC-70-6 | 0 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
| SIE868DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V POLARPAK | 5,945 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIE868DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V POLARPAK | 5,945 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIE868DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V POLARPAK | 3,000 | 3,000:$1.09350 6,000:$1.05300 15,000:$1.01250 30,000:$0.99225 75,000:$0.97200 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 100V |
| 電流 - 連續漏極(Id) @ 25° C: | 60A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 8.7 毫歐 @ 20A，10V |
| Id 時的 Vgs(th)（最大）: | 2.8V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 58nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1930pF @ 50V |
| 功率 - 最大: | 83W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? SO-8 |
| 供應商設備封裝: | PowerPAK? SO-8 |
| 包裝: | 剪切帶 (CT) |