| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SIR878DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 8-SOIC | 3,000 | 3,000:$0.91125 6,000:$0.87750 15,000:$0.84375 30,000:$0.82688 75,000:$0.81000 |
| SI4434DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 250V 8-SOIC | 7,150 | 1:$2.51000 25:$1.93880 100:$1.75910 250:$1.57960 500:$1.36420 1,000:$1.14880 |
| SI5476DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V PPAK CHIPFET | 13,451 | 1:$1.44000 25:$1.14000 100:$1.02600 250:$0.89300 500:$0.79800 1,000:$0.62700 |
| SI5476DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V PPAK CHIPFET | 13,451 | 1:$1.44000 25:$1.14000 100:$1.02600 250:$0.89300 500:$0.79800 1,000:$0.62700 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 100V |
| 電流 - 連續漏極(Id) @ 25° C: | 40A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 14 毫歐 @ 15A，10V |
| Id 時的 Vgs(th)（最大）: | 2.8V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 43nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1250pF @ 50V |
| 功率 - 最大: | 44.5W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? SO-8 |
| 供應商設備封裝: | PowerPAK? SO-8 |
| 包裝: | 帶卷 (TR) |