| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| IRF510STRRPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | 765 | 1:$1.27000 25:$1.00520 100:$0.90450 250:$0.78724 |
| IRF510STRRPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | 765 | 1:$1.27000 25:$1.00520 100:$0.90450 250:$0.78724 |
| IRF510STRRPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | 0 | 800:$0.55610 1,600:$0.50250 2,400:$0.46900 5,600:$0.44555 20,000:$0.42713 40,000:$0.41540 |
| SIR804DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V 8-SOIC | 5,465 | 1:$3.21000 25:$2.47880 100:$2.24910 250:$2.01960 500:$1.74420 1,000:$1.46880 |
| SIR804DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V 8-SOIC | 5,465 | 1:$3.21000 25:$2.47880 100:$2.24910 250:$2.01960 500:$1.74420 1,000:$1.46880 |
| SIR804DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V 8-SOIC | 3,000 | 3,000:$1.23930 6,000:$1.19340 15,000:$1.14750 30,000:$1.12455 75,000:$1.10160 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 100V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 5.6A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 540 毫歐 @ 3.4A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 8.3nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 180pF @ 25V |
| 功率 - 最大: | 3.7W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | TO-263（D2Pak） |
| 包裝: | Digi-Reel® |