| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI1302DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V SC-70-3 | 633 | 1:$0.52000 25:$0.36560 100:$0.31350 250:$0.27076 500:$0.23276 1,000:$0.18050 |
| SI7143DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 5,066 | 1:$1.52000 25:$1.20000 100:$1.08000 250:$0.94000 500:$0.84000 1,000:$0.66000 |
| SI1302DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V SC-70-3 | 0 | 3,000:$0.14725 6,000:$0.13775 15,000:$0.12825 30,000:$0.12113 75,000:$0.11875 150,000:$0.11400 |
| SI7143DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 5,066 | 1:$1.52000 25:$1.20000 100:$1.08000 250:$0.94000 500:$0.84000 1,000:$0.66000 |
| SI7143DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 3,000 | 3,000:$0.56000 6,000:$0.53200 15,000:$0.51000 30,000:$0.49600 75,000:$0.48000 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 600mA |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 480 毫歐 @ 600mA，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 3V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 1.4nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 280mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SC-70，SOT-323 |
| 供應(yīng)商設(shè)備封裝: | SC-70-3 |
| 包裝: | 剪切帶 (CT) |