| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI4848DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 150V 8-SOIC | 2,500 | 2,500:$0.53620 5,000:$0.50939 12,500:$0.48832 25,000:$0.47492 62,500:$0.45960 |
| SI4446DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 464 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| SI4446DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 464 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| SI4446DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 0 | 2,500:$0.26100 5,000:$0.24300 12,500:$0.23400 25,000:$0.22500 62,500:$0.22140 125,000:$0.21600 |
| SI4447DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 40V 8-SOIC | 565 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| SI4447DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 40V 8-SOIC | 565 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| SI4447DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 40V 8-SOIC | 0 | 2,500:$0.26100 5,000:$0.24300 12,500:$0.23400 25,000:$0.22500 62,500:$0.22140 125,000:$0.21600 |
| SI4829DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 8-SOIC | 565 | 1:$0.75000 25:$0.52360 100:$0.44880 250:$0.38760 500:$0.33320 1,000:$0.25840 |
| SI4829DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 8-SOIC | 565 | 1:$0.75000 25:$0.52360 100:$0.44880 250:$0.38760 500:$0.33320 1,000:$0.25840 |
| SI4829DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 8-SOIC | 0 | 2,500:$0.21080 5,000:$0.19720 12,500:$0.18360 25,000:$0.17340 62,500:$0.17000 125,000:$0.16320 |
| SI1467DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V SC-70-6 | 688 | 1:$0.75000 25:$0.57800 100:$0.51000 250:$0.44200 500:$0.37400 1,000:$0.29750 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 150V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 2.7A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 85 毫歐 @ 3.5A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 21nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.5W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |