| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI7309DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 8A 1212-8 PPAK | 6,055 | 1:$1.14000 25:$0.90000 100:$0.81000 250:$0.70500 500:$0.63000 1,000:$0.49500 |
| SI7309DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 8A 1212-8 PPAK | 3,000 | 3,000:$0.42000 6,000:$0.39900 15,000:$0.38250 30,000:$0.37200 75,000:$0.36000 |
| SI1330EDL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V SC-70-3 | 0 | 3,000:$0.17670 6,000:$0.16530 15,000:$0.15390 30,000:$0.14535 75,000:$0.14250 150,000:$0.13680 |
| SI1305DL-T1-GE3 | Vishay Siliconix | MOSFET P-CH G-S 8V SC-70-3 | 212 | 1:$0.61000 25:$0.42360 100:$0.36300 250:$0.31352 500:$0.26950 1,000:$0.20900 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 8A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 115 毫歐 @ 3.9A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 3V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 22nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 600pF @ 30V |
| 功率 - 最大: | 19.8W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? 1212-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? 1212-8 |
| 包裝: | 剪切帶 (CT) |