| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI1305DL-T1-GE3 | Vishay Siliconix | MOSFET P-CH G-S 8V SC-70-3 | 0 | 3,000:$0.17050 6,000:$0.15950 15,000:$0.14850 30,000:$0.14025 75,000:$0.13750 150,000:$0.13200 |
| SIR880DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 80V 8-SOIC | 9,020 | 1:$3.07000 25:$2.37080 100:$2.15110 250:$1.93160 500:$1.66820 1,000:$1.40480 |
| SIA431DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V PPAK SC70-6L | 2,780 | 1:$0.66000 25:$0.51000 100:$0.45000 250:$0.39000 500:$0.33000 1,000:$0.26250 |
| SIA431DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V PPAK SC70-6L | 0 | 3,000:$0.21750 6,000:$0.20250 15,000:$0.19500 30,000:$0.18750 |
| SI4418DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 200V 8-SOIC | 5,058 | 1:$1.57000 25:$1.23920 100:$1.11510 250:$0.97056 500:$0.86730 1,000:$0.68145 |
| SI4418DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 200V 8-SOIC | 5,058 | 1:$1.57000 25:$1.23920 100:$1.11510 250:$0.97056 500:$0.86730 1,000:$0.68145 |
| SI4418DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 200V 8-SOIC | 5,000 | 2,500:$0.65467 |
| SIS892DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 1212-8 PPAK | 3,000 | 3,000:$0.64400 6,000:$0.61180 15,000:$0.58650 30,000:$0.57040 75,000:$0.55200 |
| SI4464DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 200V 8-SOIC | 443 | 1:$1.14000 25:$0.89720 100:$0.80730 250:$0.70264 500:$0.62790 1,000:$0.49335 |
| SI7119DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 200V 1212-8 PPAK | 4,170 | 1:$1.10000 25:$0.87000 100:$0.78300 250:$0.68152 500:$0.60900 1,000:$0.47850 |
| SI7119DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 200V 1212-8 PPAK | 4,170 | 1:$1.10000 25:$0.87000 100:$0.78300 250:$0.68152 500:$0.60900 1,000:$0.47850 |
| SI7621DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1212-8 PPAK | 3,000 | 1:$0.73000 25:$0.56120 100:$0.49500 250:$0.42900 500:$0.36300 1,000:$0.28875 |
| SI4156DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 5,184 | 1:$1.03000 25:$0.81000 100:$0.72900 250:$0.63452 500:$0.56700 1,000:$0.44550 |
| SI4156DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 2,500 | 2,500:$0.37800 5,000:$0.35910 12,500:$0.34425 25,000:$0.33480 62,500:$0.32400 |
| SI3475DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 200V 6-TSOP | 5,347 | 1:$1.03000 25:$0.81000 100:$0.72900 250:$0.63452 500:$0.56700 1,000:$0.44550 |
| SI3475DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 200V 6-TSOP | 5,347 | 1:$1.03000 25:$0.81000 100:$0.72900 250:$0.63452 500:$0.56700 1,000:$0.44550 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 8V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 860mA |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 280 毫歐 @ 1A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 450mV @ 250µA |
| 閘電荷(Qg) @ Vgs: | 4nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 290mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SC-70，SOT-323 |
| 供應(yīng)商設(shè)備封裝: | SC-70-3 |
| 包裝: | 帶卷 (TR) |