| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI7119DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 200V 1212-8 PPAK | 4,170 | 1:$1.10000 25:$0.87000 100:$0.78300 250:$0.68152 500:$0.60900 1,000:$0.47850 |
| SI7621DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1212-8 PPAK | 3,000 | 1:$0.73000 25:$0.56120 100:$0.49500 250:$0.42900 500:$0.36300 1,000:$0.28875 |
| SI4156DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 5,184 | 1:$1.03000 25:$0.81000 100:$0.72900 250:$0.63452 500:$0.56700 1,000:$0.44550 |
| SI4156DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 2,500 | 2,500:$0.37800 5,000:$0.35910 12,500:$0.34425 25,000:$0.33480 62,500:$0.32400 |
| SI3475DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 200V 6-TSOP | 5,347 | 1:$1.03000 25:$0.81000 100:$0.72900 250:$0.63452 500:$0.56700 1,000:$0.44550 |
| SI3475DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 200V 6-TSOP | 5,347 | 1:$1.03000 25:$0.81000 100:$0.72900 250:$0.63452 500:$0.56700 1,000:$0.44550 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 200V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 3.8A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 1.05 歐姆 @ 1A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 25nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 666pF @ 50V |
| 功率 - 最大: | 52W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? 1212-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? 1212-8 |
| 包裝: | 剪切帶 (CT) |