| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SI1307EDL-T1-GE3 | Vishay Siliconix | MOSFET P-CH G-S 12V SC-70-3 | 461 | 1:$0.61000 25:$0.42360 100:$0.36300 250:$0.31352 500:$0.26950 1,000:$0.20900 |
| SI3464DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 6-TSOP | 2,996 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
| SI1307EDL-T1-GE3 | Vishay Siliconix | MOSFET P-CH G-S 12V SC-70-3 | 0 | 3,000:$0.17050 6,000:$0.15950 15,000:$0.14850 30,000:$0.14025 75,000:$0.13750 150,000:$0.13200 |
| SI3464DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 6-TSOP | 0 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 12V |
| 電流 - 連續漏極(Id) @ 25° C: | 850mA |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 290 毫歐 @ 1A，4.5V |
| Id 時的 Vgs(th)（最大）: | 450mV @ 250µA |
| 閘電荷(Qg) @ Vgs: | 5nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 290mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SC-70，SOT-323 |
| 供應商設備封裝: | SC-70-3 |
| 包裝: | Digi-Reel® |