| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSB280N15NZ3 G | Infineon Technologies | MOSFET N-CH 150V 9A WDSON-2 | 5,000 | 5,000:$1.12359 10,000:$1.08038 25,000:$1.05877 50,000:$1.03716 |
| BUZ30A H3045A | Infineon Technologies | MOSFET N-CH 200V 21A TO-263 | 1,989 | 1:$2.66000 10:$2.28400 25:$2.05560 100:$1.86540 250:$1.67508 500:$1.44666 |
| BUZ30A H3045A | Infineon Technologies | MOSFET N-CH 200V 21A TO-263 | 1,989 | 1:$2.66000 10:$2.28400 25:$2.05560 100:$1.86540 250:$1.67508 500:$1.44666 |
| BUZ30A H3045A | Infineon Technologies | MOSFET N-CH 200V 21A TO-263 | 1,000 | 1,000:$1.10403 2,000:$1.02789 5,000:$0.98982 10,000:$0.95175 25,000:$0.93272 50,000:$0.91368 |
| BSC010NE2LSI | Infineon Technologies | MOSFET N-CH 25V 38A TDSON-8 | 5,000 | 5,000:$1.13997 10,000:$1.09613 25,000:$1.07420 50,000:$1.05228 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 150V |
| 電流 - 連續漏極(Id) @ 25° C: | 30A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 28 毫歐 @ 30A，10V |
| Id 時的 Vgs(th)（最大）: | 4V @ 60µA |
| 閘電荷(Qg) @ Vgs: | 21nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1600pF @ 75V |
| 功率 - 最大: | 57W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 3-WDSON |
| 供應商設備封裝: | MG-WDSON-2，CanPAK M? |
| 包裝: | 帶卷 (TR) |