| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSC070N10NS3 G | Infineon Technologies | MOSFET N-CH 100V 90A TDSON-8 | 5,788 | 1:$2.74000 10:$2.34700 25:$2.11200 100:$1.91640 250:$1.72084 500:$1.48618 1,000:$1.25152 2,500:$1.13419 |
| BSZ0901NSI | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON | 5,000 | 5,000:$1.00386 10,000:$0.96525 25,000:$0.94595 50,000:$0.92664 |
| IPD034N06N3 G | Infineon Technologies | MOSFET N-CH 60V 100A TO252-3 | 4,160 | 1:$2.60000 10:$2.22600 25:$2.00360 100:$1.81810 250:$1.63264 500:$1.41000 1,000:$1.18736 |
| IPD034N06N3 G | Infineon Technologies | MOSFET N-CH 60V 100A TO252-3 | 4,160 | 1:$2.60000 10:$2.22600 25:$2.00360 100:$1.81810 250:$1.63264 500:$1.41000 1,000:$1.18736 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 100V |
| 電流 - 連續漏極(Id) @ 25° C: | 90A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 7 毫歐 @ 50A，10V |
| Id 時的 Vgs(th)（最大）: | 3.5V @ 75µA |
| 閘電荷(Qg) @ Vgs: | 55nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 4000pF @ 50V |
| 功率 - 最大: | 114W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerTDFN |
| 供應商設備封裝: | PG-TDSON-8 |
| 包裝: | Digi-Reel® |