| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| IPB038N12N3 G | Infineon Technologies | MOSFET N-CH 120V 120A TO263-3 | 1,000 | 1,000:$3.07104 2,000:$2.91749 5,000:$2.79684 10,000:$2.72006 25,000:$2.63232 |
| BSC011N03LSI | Infineon Technologies | MOSFET N-CH 30V 37A TDSON-8 | 4,974 | 1:$3.07000 10:$2.63100 25:$2.36800 100:$2.14890 250:$1.92964 500:$1.66650 1,000:$1.40336 2,500:$1.27180 |
| BSC011N03LSI | Infineon Technologies | MOSFET N-CH 30V 37A TDSON-8 | 4,974 | 1:$3.07000 10:$2.63100 25:$2.36800 100:$2.14890 250:$1.92964 500:$1.66650 1,000:$1.40336 2,500:$1.27180 |
| BSC011N03LSI | Infineon Technologies | MOSFET N-CH 30V 37A TDSON-8 | 0 | 5,000:$1.14023 10,000:$1.09638 25,000:$1.07445 50,000:$1.05252 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 120V |
| 電流 - 連續漏極(Id) @ 25° C: | 120A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 3.8 毫歐 @ 100A，10V |
| Id 時的 Vgs(th)（最大）: | 4V @ 270µA |
| 閘電荷(Qg) @ Vgs: | 211nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 13800pF @ 60V |
| 功率 - 最大: | 300W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應商設備封裝: | PG-TO263-2 |
| 包裝: | 帶卷 (TR) |