| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| DMN4800LSSL-13 | Diodes Inc | MOSFET N-CH 30V 8A SO-8 | 7,500 | 2,500:$0.15500 5,000:$0.14500 12,500:$0.13500 25,000:$0.12800 62,500:$0.12500 125,000:$0.12000 |
| DMN65D8LW-7 | Diodes Inc | MOSFET N CH 60V 300MA SOT323 | 5,892 | 1:$0.59000 10:$0.45900 25:$0.38760 100:$0.31590 250:$0.26164 500:$0.21612 1,000:$0.16188 |
| DMN65D8LW-7 | Diodes Inc | MOSFET N CH 60V 300MA SOT323 | 5,892 | 1:$0.59000 10:$0.45900 25:$0.38760 100:$0.31590 250:$0.26164 500:$0.21612 1,000:$0.16188 |
| DMN65D8LW-7 | Diodes Inc | MOSFET N CH 60V 300MA SOT323 | 3,000 | 3,000:$0.14438 6,000:$0.13563 15,000:$0.12688 30,000:$0.11638 75,000:$0.11200 150,000:$0.10763 |
| DMP2018LFK-7 | Diodes Inc | MOSFET P-CH 20V 9.2A 6-DFN | 4,903 | 1:$0.45000 10:$0.38300 25:$0.33560 100:$0.28740 250:$0.24924 500:$0.21112 1,000:$0.16275 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續漏極(Id) @ 25° C: | 8A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 14 毫歐 @ 8A，10V |
| Id 時的 Vgs(th)（最大）: | 1.6V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 8.7nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | 798pF @ 10V |
| 功率 - 最大: | 1.46W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝: | 8-SO |
| 包裝: | 帶卷 (TR) |