| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| IPD079N06L3 G | Infineon Technologies | MOSFET N-CH 60V 50A TO252-3 | 2,500 | 2,500:$0.52906 5,000:$0.50261 12,500:$0.48182 25,000:$0.46860 62,500:$0.45348 |
| BSZ0904NSI | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON | 8,677 | 1:$1.51000 10:$1.34800 25:$1.18960 100:$1.07060 250:$0.93176 500:$0.83266 1,000:$0.65423 2,500:$0.61458 |
| BSZ0904NSI | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON | 8,677 | 1:$1.51000 10:$1.34800 25:$1.18960 100:$1.07060 250:$0.93176 500:$0.83266 1,000:$0.65423 2,500:$0.61458 |
| IPD60R750E6 | Infineon Technologies | MOSFET N-CH 600V 5.7A TO252-3 | 3,786 | 1:$1.42000 10:$1.27400 25:$1.12440 100:$1.01200 250:$0.88080 500:$0.78708 1,000:$0.61842 |
| IPD60R750E6 | Infineon Technologies | MOSFET N-CH 600V 5.7A TO252 | 2,500 | 2,500:$0.52472 5,000:$0.49848 12,500:$0.47787 25,000:$0.46475 62,500:$0.44976 |
| 類(lèi)別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門(mén) |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 50A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 7.9 毫歐 @ 50A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.2V @ 34µA |
| 閘電荷(Qg) @ Vgs: | 29nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 4900pF @ 30V |
| 功率 - 最大: | 79W |
| 安裝類(lèi)型: | 表面貼裝 |
| 封裝/外殼: | TO-252-3，DPak（2 引線(xiàn)+接片），SC-63 |
| 供應(yīng)商設(shè)備封裝: | PG-TO252-3 |
| 包裝: | 帶卷 (TR) |