| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| DMN21D2UFB-7B | Diodes Inc | MOSFET N CH 20V X1-DFN1006-3 | 19,525 | 1:$0.56000 10:$0.40600 25:$0.31560 100:$0.23890 250:$0.16888 500:$0.13518 1,000:$0.10369 2,500:$0.09012 5,000:$0.08094 |
| DMN21D2UFB-7B | Diodes Inc | MOSFET N CH 20V X1-DFN1006-3 | 10,000 | 10,000:$0.07000 30,000:$0.06563 50,000:$0.05819 100,000:$0.05688 250,000:$0.05469 |
| DMP21D0UFB4-7B | Diodes Inc | MOSF P CH 20V 770MA DFN1006H4-3 | 14,697 | 1:$0.56000 10:$0.40600 25:$0.31560 100:$0.23890 250:$0.16888 500:$0.13518 1,000:$0.10369 2,500:$0.09012 5,000:$0.08094 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 760mA |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 990 毫歐 @ 100mA，4.5V |
| Id 時的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 0.93nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 27.6pF @ 16V |
| 功率 - 最大: | 900mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 3-XFDFN |
| 供應(yīng)商設(shè)備封裝: | 3-X1DFN1006 |
| 包裝: | 剪切帶 (CT) |