| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| BSS806N H6327 | Infineon Technologies | MOSFET N-CH 20V 2.3A SOT23 | 2,895 | 1:$0.62000 10:$0.44400 25:$0.35080 100:$0.26640 250:$0.18872 500:$0.15096 1,000:$0.11544 |
| BSS806N H6327 | Infineon Technologies | MOSFET N-CH 20V 2.3A SOT23 | 0 | 3,000:$0.08880 6,000:$0.07992 15,000:$0.07104 30,000:$0.06660 75,000:$0.05905 150,000:$0.05550 |
| BSC12DN20NS3 G | Infineon Technologies | MOSFET N-CH 200V 11.3A 8TDSON | 15,294 | 1:$1.83000 10:$1.56700 25:$1.41040 100:$1.27960 250:$1.14908 500:$0.99238 1,000:$0.83568 2,500:$0.75734 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 2.3A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 57 毫歐 @ 2.3A，2.5V |
| Id 時的 Vgs(th)（最大）: | 750mV @ 11µA |
| 閘電荷(Qg) @ Vgs: | 1.7nC @ 2.5V |
| 輸入電容 (Ciss) @ Vds: | 529pF @ 10V |
| 功率 - 最大: | 500mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應(yīng)商設(shè)備封裝: | PG-SOT23-3 |
| 包裝: | 剪切帶 (CT) |