| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| BSC22DN20NS3 G | Infineon Technologies | MOSFET N-CH 200V 7A 8TDSON | 9,853 | 1:$1.59000 10:$1.42100 25:$1.25360 100:$1.12810 250:$0.98184 500:$0.87738 1,000:$0.68937 2,500:$0.64759 |
| BSC22DN20NS3 G | Infineon Technologies | MOSFET N-CH 200V 7A 8TDSON | 9,853 | 1:$1.59000 10:$1.42100 25:$1.25360 100:$1.12810 250:$0.98184 500:$0.87738 1,000:$0.68937 2,500:$0.64759 |
| BSC22DN20NS3 G | Infineon Technologies | MOSFET N-CH 200V 7A 8TDSON | 5,000 | 5,000:$0.55567 10,000:$0.53270 25,000:$0.51807 50,000:$0.50136 |
| BSZ22DN20NS3 G | Infineon Technologies | MOSFET N-CH 200V 7A 8TSDSON | 7,344 | 1:$1.59000 10:$1.42100 25:$1.25360 100:$1.12810 250:$0.98184 500:$0.87738 1,000:$0.68937 2,500:$0.64759 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 200V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 7A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 225 毫歐 @ 3.5A，10V |
| Id 時的 Vgs(th)（最大）: | 4V @ 13µA |
| 閘電荷(Qg) @ Vgs: | 5.6nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 430pF @ 100V |
| 功率 - 最大: | 34W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerTDFN |
| 供應商設備封裝: | PG-TDSON-8 |
| 包裝: | Digi-Reel® |