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參數(shù)資料
| 型號： | EFA025AL |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | High Gain GaAs Power FET |
| 中文描述： | 高增益GaAs功率場效應(yīng)管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 28K |
| 代理商： | EFA025AL |
Excelics
EFA025AL
DATA SHEET
High Gain GaAs Power FET
+20.0dBm TYPICAL OUTPUT POWER
11.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 5mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Power Added efficiency at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
17.0
20.0
20.0
11.5
9.0
38
dBm
G
1dB
9.5
dB
PAE
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
20
45
65
mA
Gm
Transconductance Vds=3V, Vgs=0V
30
50
mS
Vp
Pinch-off Voltage Vds=3V, Ids=1.0mA
-1.5
-2.5
V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
155
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Ids
Drain Current
Igsf
Forward Gate Current
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
Pt
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
PARAMETERS
ABSOLUTE
1
12V
-8V
Idss
6mA
19dBm
175
o
C
-65/175
o
C
880mW
CONTINUOUS
2
8V
-4V
Idss
1mA
@ 3dB Compression
150
o
C
-65/150
o
C
730mW
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
50
48
50
40
59
78
104
420
260
90
D
D
G
G
S
S
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