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參數資料
| 型號： | EGL41D-E3/51 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-213AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, GL41, 2 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 94K |
| 代理商： | EGL41D-E3/51 |
Vishay General Semiconductor
BYM12-50 thru BYM12-400, EGL41A thru EGL41G
Document Number 88581
26-Jun-06
www.vishay.com
1
Surface Mount Glass Passivated Ultrafast Rectifier
FEATURES
Cavity-free glass-passivated junction
Ideal for automated placement
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets environmental standard MIL-S-19500
Meets MSL level 1, per J-STD-020C, LF max peak
of 250 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters and
inverters for consumer, computer, automotive and
telecommunication.
MECHANICAL DATA
Case:
DO-213AB, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive
peak reverse voltage rating
Patented*
is covered by
Patent No. 3,996,602,
brazed-lead assembly to
Patent No. 3,930,306
DO-213AB (GL41)
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
1.0 A
50 V to 400 V
30 A
50 ns
1.0 V, 1.25 V
175 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYM12-50 BYM12-100 BYM12-150 BYM12-200 BYM12-300 BYM12-400 UNIT
Fast efficient device: 1st band is Green
EGL41A
EGL41B
EGL41C
EGL41D
EGL41F
EGL41G
Polarity color bands (2nd Band)
Gray
Red
Pink
Orange
Brown
Yellow
Maximum repetitive peak
reverse voltage
V
RRM
50
100
150
200
300
400
V
Maximum RMS voltage
V
RMS
V
DC
35
70
105
140
210
280
V
Maximum DC blocking voltage
50
100
150
200
300
400
V
Maximum average forward rectified
current at T
T
= 75 °C
I
F(AV)
1.0
A
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load
I
FSM
30
A
Operating junction and storage
temperature range
T
J
, T
STG
- 65 to + 175
°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| EGL41DHE3/75 | 功能描述:整流器 200 Volt 1.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGL41DHE3/76 | 功能描述:整流器 200 Volt 1.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGL41DHE3/96 | 功能描述:整流器 200 Volt 1.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGL41DHE3/97 | 功能描述:整流器 200 Volt 1.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGL41E | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount Glass Passivated Ultrafast Rectifier |
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