
EC3A01B
No.6612-1/5
Features
Ultrasmall (1006 size), thin (0.5mm) leadless package.
Especially suited for use in electret condenser microphone for audio equipments and telephones.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
V
mA
mA
mW
°
C
°
C
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
--20
10
1
100
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
V(BR)GDO
VGS(off)
IDSS
yfs
Ciss
Crss
IG=---100
μ
A
VDS=5V, ID=1
μ
A
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
--20
--0.2
140
0.5
V
V
μ
A
mS
pF
pF
--0.6
--1.2
350
1.2
3.5
0.65
*The EC3A01B is classified by IDSS as follows.(unit :
μ
A)
Rank
V4A
IDSS
140 to 240
V5A
210 to 350
Ordering number : ENN6612B
13105GB TS IM / 42503 TS IM TA-100435 / 13001 TS IM TA-3160
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
EC3A01B
N-Channel Silicon Junction FET
Electret Condenser Microphone
Applications