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參數資料
| 型號： | EPA240D-SOT89 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DC-6GHz High Efficiency Heterojunction Power FET |
| 中文描述： | 的DC - 6GHz的高效率異質結功率場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 200K |
| 代理商： | EPA240D-SOT89 |
*
6
'
6285&(
Excelics
EPA240D-SOT89
DC-6GHz High Efficiency Heterojunction Power FET
Features
LOW COST SURFACE-MOUNT PLASTIC PACKAGE
+33dBm TYPICAL OUTPUT POWER
14.0dB TYPICAL POWER GAIN AT 2GHz
0.4dB TYPICAL NOISE FIGURE AT 2GHz
+40dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT
POINT AT 2GHz
0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY AND HIGH RELIABILITY
Applications
Analog and Digital Wireless System
High Dynamic Range LNA
HPA
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
DATA SHEET
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression f = 2GHz
Vds=8V, Ids=350mA
Gain at 1dB Compression f = 2GHz
Vds=8V, Ids=350mA
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=350mA f = 2GHz
Noise Figure f = 2GHz
Vds=5V, Ids=150mA
Vds=5V, Ids=350mA
Output 3rd Order Intercept Point f = 2GHz
Vds=5-8V, Ids=350mA
Vds=5V, Ids=150mA
Saturated Drain Current Vds=3V, Vgs=0V
Transconductance Vds=3V, Vgs=0V
Pinch-off Voltage Vds=3V, Ids=6mA
Drain Breakdown Voltage Igd=2.4mA
Source Breakdown Voltage Igs=2.4mA
Thermal Resistance
MIN
TYP
MAX
UNIT
P
1dB
31.5
33.0
dBm
G
1dB
12.0
14.0
dB
PAE
55
%
NF
0.4
0.8
40
38
720
760
-1.0
-15
-14
25*
dB
IP3
dBm
Idss
Gm
Vp
BVgd
BVgs
Rth
440
480
-11
-7
940
-2.5
mA
mS
V
V
V
o
C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-8V
Idss
120mA
30dBm
175
o
C
-65/175
o
C
5.5 W
CONTINUOUS
2
8V
-3V
570mA
20mA
@ 3dB Compression
150
o
C
-65/150
o
C
4.6 W
(Top View)
All Dimensions In Mils
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